Which of the following statements is true?

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(C) In an $n$-type semiconductor,the majority charge carriers are electrons.In a $p$-type semiconductor,the majority charge carriers are holes.Pure $G

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Majority carriers in $p$-type semiconductor are holes.

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(C) In an $n$-type semiconductor,the majority charge carriers are electrons.In a $p$-type semiconductor,the majority charge carriers are holes.Pure $Ge$ is an intrinsic semiconductor,and its resistivity decreases with an increase in temperature due to the generation of more charge carriers.Doping with a trivalent impurity (like $Al$,$Ga$,$In$) creates a $p$-type semiconductor.Doping with a pentavalent impurity (like $P$,$As$,$Sb$) creates an $n$-type semiconductor and decreases resistivity.Therefore,the statement that majority carriers in $p$-type semiconductor are holes is correct.

Similar Questions

If one indium atom is doped per $5 \times 10^7$ silicon atoms,and the number density of silicon atoms is $5 \times 10^{28} \, \text{atoms}/\text{m}^3$,find the number density of acceptor atoms in $\text{atoms}/\text{cm}^3$.

In a $p-$type semiconductor, which of the following statements is true?

$A$ pure semiconductor crystal has $8 \times 10^{28} \text{ atoms/m}^3$. It is doped with a $2 \text{ ppm}$ concentration of pentavalent atoms. The number of holes formed in the semiconductor crystal is (Intrinsic carrier concentration,$n_i = 1 \times 10^{16} \text{ m}^{-3}$).

The length of a germanium rod is $0.928 \ cm$ and its area of cross-section is $1 \ mm^2$. If for germanium $n_i = 2.5 \times 10^{19} \ m^{-3}$,$\mu_h = 0.15 \ m^2 V^{-1} s^{-1}$,and $\mu_e = 0.35 \ m^2 V^{-1} s^{-1}$,then the resistivity is:

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