The length of a germanium rod is $0.928 \ cm$ and its area of cross-section is $1 \ mm^2$. If for germanium $n_i = 2.5 \times 10^{19} \ m^{-3}$,$\mu_h = 0.15 \ m^2 V^{-1} s^{-1}$,and $\mu_e = 0.35 \ m^2 V^{-1} s^{-1}$,then the resistivity is:

  • A
    $50 \ \Omega \ cm$
  • B
    $25 \ \Omega \ cm$
  • C
    $50 \ \Omega \ mm$
  • D
    $100 \ \Omega \ m$

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Similar Questions

$A$ pure silicon crystal at temperature $300 \text{ K}$ has electron and hole concentration $(n_i) = 10^{16} \text{ per m}^3$ each. If $10^{21}$ phosphorus atoms $(n_D)$ are added per cubic metre, what is the new hole concentration in the silicon crystal?

For an intrinsic semiconductor,where $n_{h}$ and $n_{e}$ are the number of holes per unit volume and the number of electrons per unit volume respectively,which of the following relations holds true?

Which of the following statements is true for an $N$-type semiconductor?

Which of the following is an inorganic compound semiconductor?

In a pure silicon crystal,the electron-hole concentration is $10^{16} \ m^{-3}$ at $301 \ K$. Now,$10^{21}$ atoms of phosphorus are added per cubic metre. The new hole concentration in silicon is (in per $m^3$):

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