Which of the following is an inorganic compound semiconductor?

If $n_e$ and $n_h$ are electron and hole concentrations in an extrinsic semiconductor and $n_i$ is the intrinsic carrier concentration, then:

When the temperature of a semiconductor increases,then:

$A$ $P$-type semiconductor has acceptor levels $57 \; meV$ above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant $h = 6.6 \times 10^{-34} \; J \cdot s$, speed of light $c = 3 \times 10^8 \; m/s$)

In an $n$-type semiconductor, the Fermi energy level lies

Suppose a pure $Si$ crystal has $5 \times 10^{28}$ atoms $m^{-3}$. It is doped by $1$ ppm concentration of pentavalent $As$. Calculate the number of holes. Given that $n_i = 1.5 \times 10^{16} m^{-3}$.