An intrinsic semiconductor is converted into $N$-type extrinsic semiconductor by doping it with

The following band-energy diagram represents:

At a temperature of $500 \ K$,the intrinsic electron number density $(n_e)$ and hole number density $(n_h)$ in a pure semiconductor are equal to $1.5 \times 10^{16} \ m^{-3}$. Now,by adding indium impurity,the hole density $(n_h)$ increases to $4.5 \times 10^{22} \ m^{-3}$. This doped semiconductor is:

Which of the following statements is $\underline{TRUE}$ for $n$-type semiconductor?

For an intrinsic semiconductor, if $n_h$ and $n_e$ represent the number of holes per unit volume and the number of free electrons per unit volume respectively, then:

In the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is