Barrier potential of a $p-n$ junction diode does not depend on:

The resistance of a germanium junction diode whose $V-I$ characteristic is shown in the figure is ........ $k\Omega$ $(V_k = 0.3 \, V)$.

In the case of forward biasing of a $PN-$junction,which one of the following figures correctly depicts the direction of flow of carriers?

$A$ potential barrier of $0.4 \,V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0 \times 10^{5} \,ms^{-1}$. The speed with which the electron enters the $p$-side will be $\frac{x}{3} \times 10^{5} \,ms^{-1}$. The value of $x$ is ..............
(Given: mass of electron $= 9 \times 10^{-31} \,kg$,charge on electron $= 1.6 \times 10^{-19} \,C$.)

In a semiconductor $p-n$ diode, the doping concentrations on $p$-side and $n$-side are $10^{15} \text{ atoms/cm}^3$ and $10^{18} \text{ atoms/cm}^3$, respectively. Which one of the following statements is true?

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is......$A$