Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given by $I = I_0 \left( e^{\frac{V}{2 V_T}} - 1 \right)$, where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction, then $r_d(1000 I_0) = \alpha r_d(10 I_0)$, where $\alpha$ is approximately equal to

When a $PN$ junction diode is reverse biased,

In the given options,the diode that is forward biased is

For diode $D_1$,the forward bias resistance is $20 \ \Omega$ and the reverse bias resistance is $600 \ \Omega$. For diode $D_2$,the forward bias resistance is $30 \ \Omega$ and the reverse bias resistance is $200 \ \Omega$. Find the equivalent resistance between $A$ and $B$ if $(i)$ $A$ is at a higher potential,and $(ii)$ $B$ is at a higher potential.

The diode shown in the circuit is a silicon diode. The potential difference between the points $A$ and $B$ will be.....$V$

In the forward bias arrangement of a $PN-$junction diode: