The magnitude of the diffusion current in a $p-n$ junction is smaller than the magnitude of the drift current:

$A$ potential barrier of $0.50 \ V$ exists across a $P-N$ junction. If the depletion region is $5.0 \times 10^{-7} \ m$ wide,the intensity of the electric field in this region is:

In a $P-N$ junction under reverse bias,the depletion layer contains .......

Find the current flowing through the ideal diode in the given circuit. (in $A$)

$A$ potential barrier of $0.4 \,V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0 \times 10^{5} \,ms^{-1}$. The speed with which the electron enters the $p$-side will be $\frac{x}{3} \times 10^{5} \,ms^{-1}$. The value of $x$ is ..............
(Given: mass of electron $= 9 \times 10^{-31} \,kg$,charge on electron $= 1.6 \times 10^{-19} \,C$.)

If each diode in the figure has a forward bias resistance of $25\,\Omega$ and infinite resistance in reverse bias,what will be the values of the currents $I_1, I_2, I_3,$ and $I_4$?