In a $P-N$ junction under reverse bias,the depletion layer contains .......

For a $p-n$ junction,the intensity of the electric field is $1 \times 10^{6} \text{ V/m}$ and the width of the depletion region is $5000 \text{ Å}$. The value of the potential barrier is $\dots \text{ V}$.

For a $p-n$ junction diode, breakdown voltage occurs when

Which of the following graphs is correct for a $P-N$ junction? (When the $P-N$ junction is forward biased.)

The resistance of a germanium junction diode whose $V-I$ characteristic is shown in the figure is ........ $k\Omega$ $(V_k = 0.3 \, V)$.

$A$ $P-N$ junction diode is in forward bias with a current of $10 \ mA$. The potential drop across the diode is $0.5 \ V$. Assuming the current is independent of the potential,what is the maximum voltage of the battery in series with a $200 \ \Omega$ resistor to maintain this forward bias condition? (in $V$)