$A$ $P-N$ junction diode is in forward bias with a current of $10 \ mA$. The potential drop across the diode is $0.5 \ V$. Assuming the current is independent of the potential,what is the maximum voltage of the battery in series with a $200 \ \Omega$ resistor to maintain this forward bias condition? (in $V$)
- A$1.8$
- B$4.2$
- C$2.5$
- D$3$
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The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:
Condition $V$ $I$ Forward biasing $2.0 \, V$ $60 \, mA$ Forward biasing $2.4 \, V$ $80 \, mA$ Reverse biasing $0 \, V$ $0 \, \mu A$ Reverse biasing $-2 \, V$ $-0.25 \, \mu A$
| Condition | $V$ | $I$ |
|---|---|---|
| Forward biasing | $2.0 \, V$ | $60 \, mA$ |
| Forward biasing | $2.4 \, V$ | $80 \, mA$ |
| Reverse biasing | $0 \, V$ | $0 \, \mu A$ |
| Reverse biasing | $-2 \, V$ | $-0.25 \, \mu A$ |
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View SolutionConsider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.
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