In the given figure,a diode $D$ is connected to an external resistance $R = 100 \,\Omega$ and an $e.m.f.$ of $3.5 \,V$. If the barrier potential developed across the diode is $0.5 \,V$,the current in the circuit will be ........ $mA$.

Three identical p-n junction diodes $D_1$, $D_2$ and $D_3$ are connected across a battery as shown in the figure. If the widths of the depletion regions of $D_1$, $D_2$ and $D_3$ are $W_1$, $W_2$ and $W_3$, respectively, then the correct option is:

In the given figure,three silicon diodes are connected in series. What voltage at point $X$ will make all three diodes forward-biased?

$A$ semiconductor is damaged by a strong current due to:

The breakdown in a reverse biased $p-n$ junction diode is more likely to occur due to

$A$ potential barrier of $0.4 \,V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0 \times 10^{5} \,ms^{-1}$. The speed with which the electron enters the $p$-side will be $\frac{x}{3} \times 10^{5} \,ms^{-1}$. The value of $x$ is ..............
(Given: mass of electron $= 9 \times 10^{-31} \,kg$,charge on electron $= 1.6 \times 10^{-19} \,C$.)