$A$ semiconductor is damaged by a strong current due to:

When a $p-n$ junction diode is forward biased,

The $I-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $1\;V$ is applied is.......$\Omega$.

For an ideal diode,in forward and reverse biased condition the resistance is respectively

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

Out of the following,which one is a forward biased diode?