For an ideal diode,in forward and reverse biased condition the resistance is respectively

For a $p-n$ junction,the intensity of the electric field is $1 \times 10^{6} \text{ V/m}$ and the width of the depletion region is $5000 \text{ Å}$. The value of the potential barrier is $\dots \text{ V}$.

For a $pn$ junction,the width of the space charge region (depletion layer) is approximately $\qquad$ $\mu m$.

In forward bias,the width of the potential barrier in a $P-N$ junction diode:

Which of the following statements is not correct when a junction diode is in forward bias?

Two sides of a semiconductor germanium crystal $A$ and $B$ are doped with arsenic and indium respectively. They are connected to a battery as shown in the figure. The correct graph between current and voltage for the arrangement is: