Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

• A
  $A$ is true and $B$ is false.
• B
  Both $A$ and $B$ are false.
• C
  $A$ is false and $B$ is true.
• D
  Both $A$ and $B$ are true.