Diffusion current in a p-n junction is greate | vedclass

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Question

(A) In a $p-n$ junction,the diffusion current $(I_{diff})$ is caused by the concentration gradient of charge carriers,while the drift current $(I_{dri

Vedclass · Accepted Answer

The junction is forward-biased.

Vedclass · Answer

(A) In a $p-n$ junction,the diffusion current $(I_{diff})$ is caused by the concentration gradient of charge carriers,while the drift current $(I_{drift})$ is caused by the electric field in the depletion region.When the junction is forward-biased,the external voltage reduces the potential barrier,which allows a large number of majority carriers to diffuse across the junction,significantly increasing the diffusion current.Conversely,the drift current remains relatively small and constant as it depends on the minority carriers,which are thermally generated.Therefore,in a forward-biased $p-n$ junction,the magnitude of the diffusion current is much greater than that of the drift current.

Diffusion current in a $p-n$ junction is greater than the drift current in magnitude when:

Similar Questions

In the circuit shown in the figure,the non-zero potential difference across diode $D_{1}$ and that across diode $D_{2}$ are equal. Are the diodes identical in characteristics? Explain.

In the circuit shown,if the forward voltage drop for the diode is $0.5\, V$,the current in the circuit will be.....$mA$.

What is a diode?

In an unbiased $p-n$ junction diode:

Assertion: The value of current through the $p-n$ junction in the given figure will be $10\, mA$.
Reason: In the above figure,the $p-$side is at a higher potential than the $n-$side.

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