For the diagram shown,the resistances between points $A$ and $B$ when the ideal diode $D$ is forward biased is $R_1$ and when it is reverse biased is $R_2$. The ratio $R_1: R_2$ is

Explain the forward and reverse characteristics of the $p-n$ junction diode by drawing the circuit and graph.

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

In the given figure,which of the diodes are forward biased?

Which two important processes occur during the formation of a $p-n$ junction?

Two ammeters $A_1$ and $A_2$ are connected as shown in the given figure. By neglecting the internal resistance of the ammeters, the reading in the meter $A_1$ is (in $\text{A}$)