For the diode,the characteristic curves are given at different temperatures. The relation between the temperatures is

The $\text{I-V}$ characteristic of a $\text{P-N}$ junction in forward bias is shown. The approximate forward resistance of the junction is $-$ (in $\Omega$)

The current $i$ in the circuit will be:

The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is:

The energy of a photon in a monochromatic light of wavelength $621 \ nm$ matches with the band gap of a semiconducting material. Then the minimum energy required to create an electron-hole pair from the semiconductor is
[Take $hc = 1242 \ eV-nm$,where $h$ is Planck's constant and $c$ is speed of light in vacuum] (in $eV$)

The approximate ratio of resistances in the forward and reverse bias of the $PN$-junction diode is