Identify the incorrect statement.

  • A
    When a $p-n$ junction diode is forward biased,the width of the depletion region decreases.
  • B
    When a $p-n$ junction diode is reverse biased,the barrier potential increases.
  • C
    $A$ photodiode is operated in the reverse bias.
  • D
    An $LED$ is a lightly doped $p-n$ junction diode which emits spontaneous radiation on forward biasing.

Explore More

Similar Questions

The $I-V$ characteristics of a photodiode for different illumination intensities $I_1, I_2, I_3$ and $I_4$ are shown in the figure. Which of the following represents the maximum intensity?

When an $LED$ is manufactured by using aluminium gallium arsenide $(AlGaAs)$,it emits:

To measure light intensity,we use:

The device that can detect optical signals is

Why is the $I-V$ characteristic of a solar cell drawn in the fourth quadrant of the coordinate system?

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo