In a forward biased p-n junction diode,the po | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(D) In a $p-n$ junction diode,the potential barrier is formed due to the diffusion of charge carriers across the junction,creating a depletion region.

Vedclass · Accepted Answer

$D$

Vedclass · Answer

(D) In a $p-n$ junction diode,the potential barrier is formed due to the diffusion of charge carriers across the junction,creating a depletion region. When the diode is forward biased,the external voltage opposes the built-in potential barrier. This reduces the height of the potential barrier and decreases the width of the depletion region. In the given diagrams,options $(A)$ and $(B)$ represent a potential barrier that is being increased (characteristic of reverse bias),while options $(C)$ and $(D)$ represent a potential barrier that is being decreased (characteristic of forward bias). Comparing $(C)$ and $(D)$,the forward bias condition results in a lower potential barrier height and a narrower depletion width. Therefore,the correct representation for a forward biased $p-n$ junction is shown in option $(D)$.

In a forward biased $p-n$ junction diode,the potential barrier in the depletion region will be of the form:

Similar Questions

For the given circuit of a $PN-$ junction diode,which of the following statements is correct?

The example for non-ohmic resistance is

In the circuit shown in the figure,the non-zero potential difference across diode $D_{1}$ and that across diode $D_{2}$ are equal. Are the diodes identical in characteristics? Explain.

What will be the current flowing in the circuit?

Vedclass Test Series

Exam Paper Generator

Online Exam Module