In a junction diode,the holes are due to

  • A
    Protons
  • B
    Neutrons
  • C
    Extra electrons
  • D
    Missing of electrons

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In pure silicon at $300 \ K$ temperature,the concentration of electrons $n_e$ and holes $n_h$ is $1.5 \times 10^{16} \ m^{-3}$. By doping with Indium,$n_h$ is increased to $4.5 \times 10^{22} \ m^{-3}$. Calculate the concentration of electrons $n_e$ in the doped silicon.

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Which of the following statements is true for an $N$-type semiconductor?

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