In pure silicon at $300 \ K$ temperature,the concentration of electrons $n_e$ and holes $n_h$ is $1.5 \times 10^{16} \ m^{-3}$. By doping with Indium,$n_h$ is increased to $4.5 \times 10^{22} \ m^{-3}$. Calculate the concentration of electrons $n_e$ in the doped silicon.
- A$5 \times 10^9 \ m^{-3}$
- B$3 \times 10^9 \ m^{-3}$
- C$1.9 \times 10^{12} \ m^{-3}$
- D$6.8 \times 10^8 \ m^{-3}$
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