$A$ donor impurity results in

$A$ hole in a $P-$type semiconductor is

In the energy band diagram of a material shown in the figure,the open circles and filled circles denote holes and electrons,respectively. The material is:

$P$-type semiconductor has acceptor levels $57 \, meV$ above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant $h = 6.6 \times 10^{-34} \, J-s$)

Let $n_e$ be the number density of electrons and $v_d$ be the drift velocity in a semiconductor. When the temperature is increased:

$A$ pure silicon crystal at temperature $300 \text{ K}$ has electron and hole concentration $(n_i) = 10^{16} \text{ per m}^3$ each. If $10^{21}$ phosphorus atoms $(n_D)$ are added per cubic metre, what is the new hole concentration in the silicon crystal?