In a photodiode,the value of the $emf$ produced by a monochromatic light beam is directly proportional to

  • A
    the barrier potential at $p-n$ junction
  • B
    the intensity of light falling on the photodiode
  • C
    the frequency of light falling on the photodiode
  • D
    the voltage applied at the $p-n$ junction

Explore More

Similar Questions

In an $LED$,when forward bias is increased (starting from zero),the intensity of emitted light will:

Assertion : Diode lasers are used as optical sources in optical communication.
Reason : Diode lasers consume less energy.

$A$ $p-n$ photodiode is fabricated from a semiconductor with a band gap of $2.8 \; eV$. Can it detect a wavelength of $6000 \; nm$?

$A$ photodetector is fabricated from a semiconductor with a band gap $E_g = 0.73 \, eV$. What is the maximum wavelength (in $nm$) it can detect?

$A$ photodiode is a device:

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo