In an $n$-type silicon,which of the following statements is true?

  • A
    Electrons are majority carriers and trivalent atoms are the dopants.
  • B
    Electrons are minority carriers and pentavalent atoms are the dopants.
  • C
    Holes are majority carriers and trivalent atoms are the dopants.
  • D
    Holes are minority carriers and pentavalent atoms are the dopants.

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$A$ crystal of intrinsic silicon at room temperature has a carrier concentration of $1.6 \times 10^{16} / m^3$. If the donor concentration level is $4.8 \times 10^{20} / m^3$, then the concentration of holes in the semiconductor is

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The mobility of free electrons is greater than that of free holes because

$A$ semiconductor has electron and hole mobilities $\mu_{n}$ and $\mu_{p}$ respectively. If its intrinsic carrier density is $n_{i}$,what will be the value of hole concentration $p$ for which the conductivity will be minimum at a given temperature?

In a $P$-type semiconductor, the acceptor level is $57 \, meV$ above the valence band. What is the wavelength of light in $\mathring{A}$ required to create a hole? (Given: $h = 6.6 \times 10^{-34} \, J \cdot s$, $c = 3 \times 10^8 \, m/s$, $1 \, eV = 1.6 \times 10^{-19} \, J$)

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