In an $n-p-n$ transistor,
- Athe emitter has higher degree of doping compared to that of the collector
- Bthe collector has higher degree of doping compared to that of the emitter
- Cboth the emitter and collector have same degree of doping
- Dthe base region is most heavily doped
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Similar Questions
When the transistor is used as an amplifier,
In a common emitter transistor amplifier,the resistance of the collector is $3 \ k\Omega$. If the current amplification factor is $100$ and the base resistance is $2 \ k\Omega$,then the power gain of the transistor is:
For a given transistor amplifier circuit in $CE$ configuration with $V_{CC} = 1 \text{ V}$,$R_c = 1 \text{ k}\Omega$,$R_b = 100 \text{ k}\Omega$,and $\beta = 100$,the value of the base current $I_b$ is:
For a transistor,if the emitter current $I_E = 25 \, mA$ and the base current $I_B = 1 \, mA$,what is the ratio of the collector current $I_C$ to the emitter current $I_E$?
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View SolutionIn a common emitter transistor amplifier circuit,the current gain $\alpha = 0.8$. If the base current changes by $3 \mu A$,then the collector current changes by: (in $\mu A$)
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