In an intrinsic semiconductor at room temperature,the number of electrons and holes are

The impurity atoms which are mixed with pure silicon to make a $P$-type semiconductor are those of:

In a pure silicon crystal,the electron-hole concentration is $10^{16} \ m^{-3}$ at $301 \ K$. Now,$10^{21}$ atoms of phosphorus are added per cubic metre. The new hole concentration in silicon is (in per $m^3$):

If a semiconductor has an intrinsic carrier concentration of $1.41 \times 10^{16} \, m^{-3}$,when doped with $10^{21} \, m^{-3}$ phosphorus,then the concentration of holes at room temperature will be

In a pure silicon, the number of electrons and holes per unit volume is $1.6 \times 10^{16} \,m^{-3}$. If silicon is doped with Boron in a way that the hole density increases to $4 \times 10^{22} \,m^{-3}$, then the electron density in the doped semiconductor will be:

Which of the following energy band diagrams shows the $N-$ type semiconductor?