In the reverse biasing of a $p-n$ junction diode,

  • A
    the width of the depletion layer decreases.
  • B
    the width of the depletion layer increases.
  • C
    the number of minority charge carriers increase.
  • D
    the number of majority charge carriers increase.

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In the circuit shown in the figure,the non-zero potential difference across diode $D_{1}$ and that across diode $D_{2}$ are equal. Are the diodes identical in characteristics? Explain.

In a $P-N$ junction,avalanche current flows in the circuit when the biasing is:

What will be the current flowing in the circuit?

The $\text{I-V}$ characteristic of a $\text{P-N}$ junction in forward bias is shown. The approximate forward resistance of the junction is $-$ (in $\Omega$)

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On adjusting the $P-N$ junction diode in forward biased,what happens to the depletion layer and the resistance?

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