The cause of the potential barrier in a p-n j | vedclass

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(D) During the formation of a $p-n$ junction,holes from the $p-$region diffuse into the $n-$region and electrons from the $n-$region diffuse into the

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concentration of positive and negative charges near the junction

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(D) During the formation of a $p-n$ junction,holes from the $p-$region diffuse into the $n-$region and electrons from the $n-$region diffuse into the $p-$region.When an electron meets a hole,they recombine and neutralize each other,creating a thin layer at the junction that is devoid of free charge carriers. This is known as the depletion layer.Due to the diffusion process,immobile ionized atoms are left behind: negative ions on the $p-$side and positive ions on the $n-$side.This accumulation of immobile charges creates an electric field and a potential difference across the junction,which is known as the potential barrier.

The cause of the potential barrier in a $p-n$ junction diode is

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