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(B) In forward bias,the potential barrier is reduced,which allows majority charge carriers to cross the junction easily. This process is known as diff

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Diffusion in forward bias,drift in reverse bias

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(B) In forward bias,the potential barrier is reduced,which allows majority charge carriers to cross the junction easily. This process is known as diffusion,and it is the dominant mechanism for current flow in forward bias.In reverse bias,the potential barrier is increased,which prevents majority charge carriers from crossing the junction. However,minority charge carriers can still cross the junction due to the electric field present in the depletion region. This process is known as drift,and it is the dominant mechanism for the small leakage current in reverse bias.

The dominant mechanism for the motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are:

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In a $p-n$ junction, an electric field of $5 \times 10^5 \ V/m$ exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from $n$-side to the $p$-side, is found to be $3.2 \times 10^{-20} \ J$. The width of the depletion region is,

When the $P$ end of a $P-N$ junction is connected to the negative terminal of the battery and the $N$ end to the positive terminal of the battery,then the $P-N$ junction behaves like:

The reason for current flow in a $P-N$ junction in forward bias is

$A$ realistic graph depicting the variation of the reciprocal of input resistance $(1/r_i)$ in an input characteristics measurement in a common emitter transistor configuration is:

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