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(D) In sample $X$,there is no impurity energy level present in the forbidden energy gap,so it is an intrinsic (undoped) semiconductor.In sample $Y$,th

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Sample $X$ is undoped while samples $Y$ and $Z$ have been doped with a fifth group and a third group impurity respectively.

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(D) In sample $X$,there is no impurity energy level present in the forbidden energy gap,so it is an intrinsic (undoped) semiconductor.In sample $Y$,the impurity energy level lies just below the conduction band,which is characteristic of a donor level created by doping with a fifth group (pentavalent) impurity.In sample $Z$,the impurity energy level lies just above the valence band,which is characteristic of an acceptor level created by doping with a third group (trivalent) impurity.Therefore,sample $X$ is undoped,while samples $Y$ and $Z$ are doped with a fifth group and a third group impurity,respectively.

The energy band diagrams for three semiconductor samples of silicon are as shown. We can then assert that

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