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$A$ potential barrier of $0.50 \ V$ exists across a $P-N$ junction. If the depletion region is $5.0 \times 10^{-7} \ m$ wide,the intensity of the electric field in this region is:

The $n$-side of the depletion layer of a $p-n$ junction

In the case of a $p-n$ junction diode,the width of the depletion region is:

In the given figure,a $Si$ diode and a $Ge$ diode are connected in series. What should be the potential at point $A$ to bring both diodes into forward bias?

In the forward bias arrangement of a $PN-$junction diode:

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