The n-side of the depletion layer of a p-n ju | vedclass

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(D) The depletion layer is formed due to the diffusion of electrons from the $n$-side to the $p$-side. There,they combine with holes on the $p$-side.I

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is positively charged

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(D) The depletion layer is formed due to the diffusion of electrons from the $n$-side to the $p$-side. There,they combine with holes on the $p$-side.In a $p-n$ junction,there are no free charges in the depletion region. It contains only bound charges (ionized dopant atoms).The width of the depletion region is inversely proportional to the dopant concentration. Therefore,it may have different widths on the $p$ and $n$-sides.Due to the diffusion of electrons from the $n$-side to the $p$-side,the $p$-side of the depletion layer becomes negatively charged (due to ionized acceptor atoms),and the $n$-side becomes positively charged (due to ionized donor atoms).

The $n$-side of the depletion layer of a $p-n$ junction

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