The potential barrier in a $p-n$ junction diode is due to

  • A
    depletion of positive charges near the junction.
  • B
    accumulation of positive charges near the junction.
  • C
    depletion of negative charges near the junction.
  • D
    accumulation of positive and negative charges near the junction.

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Assertion: The value of current through the $p-n$ junction in the given figure will be $10\, mA$.
Reason: In the above figure,the $p-$side is at a higher potential than the $n-$side.

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Depletion region in an unbiased semiconductor diode is a region consisting of

The increase in the width of the depletion region in a $p-n$ junction diode is due to

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