The I-V characteristics of a p-n junction dio | vedclass

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(B) Dynamic resistance is defined as $r_d = \frac{\Delta V}{\Delta I}$.For voltage $V_1 = 2 \; V$,we take a small interval around $2 \; V$ from the gr

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$5: 1$

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(B) Dynamic resistance is defined as $r_d = \frac{\Delta V}{\Delta I}$.For voltage $V_1 = 2 \; V$,we take a small interval around $2 \; V$ from the graph. Let the interval be from $2 \; V$ to $2.1 \; V$. $\Delta V_1 = 2.1 - 2.0 = 0.1 \; V$$\Delta I_1 = 10 \; mA - 5 \; mA = 5 \; mA = 5 	imes 10^{-3} \; A$$r_{d1} = \frac{0.1}{5 	imes 10^{-3}} = \frac{100}{5} = 20 \; \Omega$For voltage $V_2 = 4 \; V$,we take a small interval around $4 \; V$ from the graph. Let the interval be from $4 \; V$ to $4.2 \; V$.$\Delta V_2 = 4.2 - 4.0 = 0.2 \; V$$\Delta I_2 = 250 \; mA - 200 \; mA = 50 \; mA = 50 	imes 10^{-3} \; A$$r_{d2} = \frac{0.2}{50 	imes 10^{-3}} = \frac{200}{50} = 4 \; \Omega$The ratio of dynamic resistances is $\frac{r_{d1}}{r_{d2}} = \frac{20}{4} = 5: 1$.

The $I-V$ characteristics of a $p-n$ junction diode in forward bias is shown in the figure. The ratio of dynamic resistance,corresponding to forward bias voltages of $2 \; V$ and $4 \; V$ respectively,is

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