Two $PN$-junctions can be connected in series by three different methods as shown in the figure. If the potential difference across the junctions is the same,then the correct connections will be:

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

The depletion layer consists of

Two ideal diodes are connected in the network as shown in the figure. The equivalent resistance between $A$ and $B$ is $.......\Omega$.

The given circuit has two ideal diodes connected as shown in the figure. The current flowing through the resistance $R_1$ will be.....$ A$

The breakdown in a reverse biased $p-n$ junction diode is more likely to occur due to