Two ideal diodes are connected in the network as shown in the figure. The equivalent resistance between $A$ and $B$ is $.......\Omega$.

  • A
    $24$
  • B
    $25$
  • C
    $23$
  • D
    $35$

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If in a $p-n$ junction diode,a square input signal of $10\, V$ (varying from $+5\, V$ to $-5\, V$) is applied as shown,then the output signal across $R_L$ will be:

The cut-off voltage of the diodes (shown in figure) in forward bias is $0.6 \,V$. The current through the resistor of $40 \,\Omega$ is ........... $mA$.

Assuming that the junction diode is ideal, the current in the arrangement shown in the figure is: (in $\text{mA}$)

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

If a $p-n$ junction diode is in forward bias,then:

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