What will be the conductivity of a pure silicon crystal at $300 \ K$ temperature,if the electron-hole pairs per $cm^3$ is $1.072 \times 10^{10}$ at this temperature,$\mu_e = 1350 \ cm^2/V \cdot s$ and $\mu_h = 480 \ cm^2/V \cdot s$?

  • A
    $3.14 \times 10^{-6} \ \Omega^{-1} \ cm^{-1}$
  • B
    $3 \times 10^6 \ \Omega^{-1} \ cm^{-1}$
  • C
    $10^{-6} \ \Omega^{-1} \ cm^{-1}$
  • D
    $10^6 \ \Omega^{-1} \ cm^{-1}$

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In a sample of pure silicon, $10^{13} \text{ atoms/cm}^3$ of phosphorus is added. If all donor atoms are active and the electron mobility is $1200 \text{ cm}^2/\text{V}\cdot\text{s}$, what will be the resistivity at $20^\circ\text{C}$ in $\Omega\cdot\text{cm}$?

What will be the conductivity of a pure silicon crystal at $300 \ K$? Given that the intrinsic carrier concentration is $1.072 \times 10^{10} \ cm^{-3}$ and at this temperature,the electron mobility $\mu_n = 1350 \ cm^2 / (V \cdot s)$ and hole mobility $\mu_p = 480 \ cm^2 / (V \cdot s)$.

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