When forward bias is applied to a p-n junctio | vedclass

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(D) When a $p-n$ junction is forward biased,the positive terminal of the external battery is connected to the $p$-type region and the negative termina

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$V_B$ decreases,$X$ decreases

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(D) When a $p-n$ junction is forward biased,the positive terminal of the external battery is connected to the $p$-type region and the negative terminal to the $n$-type region.This external electric field opposes the internal electric field of the depletion region.As a result,the effective potential barrier $(V_B)$ decreases.Due to the reduction in the potential barrier,the majority charge carriers are pushed towards the junction,which causes the width $(X)$ of the depletion region to decrease.Therefore,both the potential barrier and the width of the depletion region decrease.

When forward bias is applied to a $p-n$ junction,then what happens to the potential barrier $(V_B)$ and the width $(X)$ of the depletion region?

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