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(C) In a $p-n$ junction,the depletion layer is formed by the diffusion of charge carriers,creating an internal electric field that opposes further dif

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electric field is maximum.

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(C) In a $p-n$ junction,the depletion layer is formed by the diffusion of charge carriers,creating an internal electric field that opposes further diffusion. When a reverse bias is applied,the external voltage adds to the built-in potential barrier,which increases the width of the depletion layer. Since the potential difference across the depletion layer increases significantly due to the reverse bias,and the width of the layer also increases,the electric field $(E = -dV/dx)$ within the depletion region becomes very high (maximum) compared to the unbiased state. Therefore,the electric field is maximum in the depletion layer of a reverse-biased $p-n$ junction.

In the depletion layer of a reverse-biased $p-n$ junction,the

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