Which statement is correct regarding the charge of doped semiconductors?

  • A
    $N$-type germanium is negatively charged and $P$-type germanium is positively charged.
  • B
    Both $N$-type and $P$-type germanium are neutral.
  • C
    $N$-type germanium is positively charged and $P$-type germanium is negatively charged.
  • D
    Both $N$-type and $P$-type germanium are negatively charged.

Explore More

Similar Questions

The charge on a hole is equal to the charge of

Pure $Si$ at $500\,K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\,m^{-3}$. The doped semiconductor is of

Difficult
View Solution

If a semiconductor has an intrinsic carrier concentration of $1.41 \times 10^{16} \, m^{-3}$,when doped with $10^{21} \, m^{-3}$ phosphorus,then the concentration of holes at room temperature will be

Difficult
View Solution

$A$ semiconductor is placed in an electric field. Let the number density of charge carriers be $n$ and the average drift velocity be $v$. If the temperature is increased,then:

The following band-energy diagram represents:

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo