$Ge$ and $Si$ diodes start conducting at $0.3\,V$ and $0.7\,V$ respectively. In the following figure,if the $Ge$ diode connection is reversed,the value of $V_0$ changes by: ...... $V$ (assume that the $Ge$ diode has a large breakdown voltage).

Can the potential barrier across a $p-n$ junction be measured by simply connecting a voltmeter across the junction?

$A$ circuit is arranged as shown in the figure. The output voltage ${V}_{0}$ is equal to $\ldots \ldots \text{ V}$.

$A$ $P-N$ junction diode is in forward bias with a current of $10 \ mA$. The potential drop across the diode is $0.5 \ V$. Assuming the current is independent of the potential,what is the maximum voltage of the battery in series with a $200 \ \Omega$ resistor to maintain this forward bias condition? (in $V$)

In a $p-n$ junction diode, the thickness of the depletion layer is $2 \times 10^{-6} \,m$ and the barrier potential is $0.3 \,V$. The intensity of the electric field at the junction is

The potential barrier in the depletion layer is due to