$A$ pure $Si$ crystal has $4 \times 10^{28}$ atoms per $m^3$. It is doped with $1 \text{ ppm}$ concentration of antimony. The number of free electrons available will be

$A$ potential difference of $2.5 \,V$ is applied across the faces of a germanium crystal plate. The face area of the crystal is $1 \,cm^2$ and its thickness is $1.0 \,mm$. The free electron concentration in germanium is $2 \times 10^{19} \,m^{-3}$ and the electron and hole mobilities are $0.33 \,m^2/V \cdot s$ and $0.17 \,m^2/V \cdot s$ respectively. The current across the plate will be .......... $A$.

When the temperature of a semiconductor increases,then:

At a temperature of $500 \ K$,the intrinsic electron number density $(n_e)$ and hole number density $(n_h)$ in a pure semiconductor are equal to $1.5 \times 10^{16} \ m^{-3}$. Now,by adding indium impurity,the hole density $(n_h)$ increases to $4.5 \times 10^{22} \ m^{-3}$. This doped semiconductor is:

Which of the following is an inorganic compound semiconductor?

Which of the following statements is correct regarding the charge of semiconductors?