$A$ $CCD$ camera is fabricated using a semiconducting material having a band gap of $3 \ eV$. The wavelength of light it can detect is nearly (in $nm$)

Which semiconductor device converts electrical energy into light?

$A$ photodiode is a device

Which wavelength of the Sun is primarily used to generate electric energy in solar cells?

Consider a situation in which reverse biased current of a particular $P-N$ junction increases when it is exposed to light of wavelength $\lambda \le 621 \, nm$. During this process,enhancement in carrier concentration takes place due to the generation of hole-electron pairs. The value of the band gap is nearly (in $eV$):

Identify the incorrect statement.