$A$ diode is connected in parallel with a resistance $R$ as shown in the figure. The most probable current $(I)$ - voltage $(V)$ characteristic is:

In the given figure,which of the diodes are forward biased?

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

$A$ $2V$ battery is connected across the points $A$ and $B$ as shown in the figure. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias,the current supplied by the battery when its positive terminal is connected to $A$ is........$A$

In the case of forward biasing of a $PN-$ junction,which one of the following figures correctly depicts the direction of flow of charge carriers?

When forward bias is applied to a $p-n$ junction,then what happens to the potential barrier $(V_B)$ and the width $(X)$ of the depletion region?