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(D) $1$. Arsenic $(As)$ is a pentavalent impurity. Doping germanium with arsenic creates an $n$-type semiconductor. Thus, $X$ is $n$-type.$2$. Indium

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$X$ is $n$-type, $Y$ is $p$-type and the junction is reverse biased

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(D) $1$. Arsenic $(As)$ is a pentavalent impurity. Doping germanium with arsenic creates an $n$-type semiconductor. Thus, $X$ is $n$-type.$2$. Indium $(In)$ is a trivalent impurity. Doping germanium with indium creates a $p$-type semiconductor. Thus, $Y$ is $p$-type.$3$. In the circuit diagram, the positive terminal of the battery is connected to $X$ ($n$-type) and the negative terminal is connected to $Y$ ($p$-type).$4$. When the $n$-side is connected to the positive terminal and the $p$-side is connected to the negative terminal, the $p-n$ junction is reverse biased.$5$. Therefore, $X$ is $n$-type, $Y$ is $p$-type, and the junction is reverse biased.

$A$ wafer of pure germanium crystal has two parts $X$ and $Y$. The end $X$ is obtained by doping with arsenic and $Y$ with indium. It is connected to a battery as shown in the figure. Which of the following statements is correct?

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