$A$ diode is connected to $220 \, V \, (rms) \, ac$ in series with a capacitor as shown in the figure. The voltage across the capacitor is

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

Determine $V_{CE}$ in the following silicon-based transistor circuit. (in $V$)

Consider the junction diode as ideal. The value of current flowing through $AB$ is

Assuming an ideal diode,find the current through the $1 \Omega$ resistance in the circuit shown in the figure.

The potential barrier in a $p-n$ junction diode is due to