An $LED$ (Light Emitting Diode) is constructed from a $p-n$ junction based on a certain $Ga-As-P$ semiconducting material whose energy gap is $1.9\, eV$. What is the wavelength of the emitted light?

With increasing biasing voltage of a photodiode,the photocurrent magnitude

$A$ photodetector is made from a semiconductor $In_{0.53}Ga_{0.47}As$ with $E_g = 0.73 \, eV$. What is the maximum wavelength,which it can detect in $nm$?

For three circuit elements $A, B$ and $C$,following observations were made in lab:
$(a)$ element $A$ cannot conduct $d.c.$ but allows $a.c.$ through it.
$(b)$ element $B$ conducts both $AC$ and $DC$ but in one direction only.
$(c)$ Element $C$,when connected across $DC$,conducts only for one polarity and emits light whose intensity first increases and then decreases with increase in applied voltage.
The elements $A, B$ and $C$ are respectively identified as

In the working of a photodiode,the reverse current depends on

When an $LED$ is manufactured by using aluminium gallium arsenide $(AlGaAs)$,it emits: