(C) In an $n-p-n$ transistor, the emitter is heavily doped to provide a large number of charge carriers. The base is very thin and lightly doped to al

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Collector is lightly doped and large in size

(C) In an $n-p-n$ transistor, the emitter is heavily doped to provide a large number of charge carriers. The base is very thin and lightly doped to allow most of the charge carriers from the emitter to pass through to the collector. The collector is moderately doped and is the largest in size to dissipate the heat generated during operation. Therefore, the statement that the collector is lightly doped is incorrect.

Class 12 Physics Semiconductor Electronics Junction Transistor

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For an $n-p-n$ transistor structure, which of the following statements is $NOT$ true?

TS EAMCET 2022 All TS EAMCET

A
Emitter is heavily doped and moderate in size
B
Base is lightly doped and thin in size
C
Collector is lightly doped and large in size
D
Collector is moderately doped and large in size

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An $npn$ transistor operates as a common emitter amplifier,with a power gain of $60\, dB$. The input circuit resistance is $100\,\Omega$ and the output load resistance is $10\, k\Omega$. The common emitter current gain $\beta$ is:

DifficultJEE MAIN 2019

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In the given circuit,a transistor with a current gain $\beta = 100$ is used. To have $V_{CE} = 5 \text{ V}$ and $V_{BE} = 0$,what should be the value of the base resistance $R_b$?

Medium

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The phase difference between input and output voltages of a $CE$ (common emitter) amplifier circuit is........$^o$.

Medium

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In an $n-p-n$ transistor circuit,the collector current is $10 \text{ mA}$. If $95\%$ of the electrons emitted reach the collector,then the base current is nearly: (in $mA$)

DifficultAP EAMCET 2024

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In the common-base configuration,a transistor has a current amplification factor of $0.95$. If the transistor is used in a common-emitter configuration and the base current changes by $2 \mu A$,then the change in the collector current is: (in $\mu A$)

MediumAP EAMCET 2018

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For an $n-p-n$ transistor structure, which of the following statements is $NOT$ true?

Similar Questions

An $npn$ transistor operates as a common emitter amplifier,with a power gain of $60\, dB$. The input circuit resistance is $100\,\Omega$ and the output load resistance is $10\, k\Omega$. The common emitter current gain $\beta$ is:

In the given circuit,a transistor with a current gain $\beta = 100$ is used. To have $V_{CE} = 5 \text{ V}$ and $V_{BE} = 0$,what should be the value of the base resistance $R_b$?

The phase difference between input and output voltages of a $CE$ (common emitter) amplifier circuit is........$^o$.

In an $n-p-n$ transistor circuit,the collector current is $10 \text{ mA}$. If $95\%$ of the electrons emitted reach the collector,then the base current is nearly: (in $mA$)

In the common-base configuration,a transistor has a current amplification factor of $0.95$. If the transistor is used in a common-emitter configuration and the base current changes by $2 \mu A$,then the change in the collector current is: (in $\mu A$)

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