For the forward biased diode characteristics shown in the figure,the dynamic resistance at $I_{D} = 3 \, \text{mA}$ will be $..... \, \Omega$.

  • A
    $25$
  • B
    $30$
  • C
    $35$
  • D
    $40$

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In the given figure,the potential difference between $A$ and $B$ is :-............. $V$

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$A$ potential barrier of $0.4 \,V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0 \times 10^{5} \,ms^{-1}$. The speed with which the electron enters the $p$-side will be $\frac{x}{3} \times 10^{5} \,ms^{-1}$. The value of $x$ is ..............
(Given: mass of electron $= 9 \times 10^{-31} \,kg$,charge on electron $= 1.6 \times 10^{-19} \,C$.)

Assuming the diodes to be of silicon with forward resistance zero, the current $I$ in the following circuit is.......$mA$

When a forward bias is applied to a $p-n$ junction,it

In the circuit shown, assume the diode to be ideal. When $V_{i}$ increases from $2 \ V$ to $6 \ V$, the change in the current is (in $mA$):

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