In a $p-n-p$ transistor,

  • A
    emitter is heavily doped and collector is moderately doped.
  • B
    emitter is moderately doped and collector is heavily doped.
  • C
    both emitter and collector are heavily doped.
  • D
    both emitter and collector are moderately doped.

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Similar Questions

$A$ transistor is operated in $CE$ configuration at $V_{CC} = 2 \ V$ such that a change in base current from $100 \ \mu A$ to $200 \ \mu A$ produces a change in the collector current from $9 \ mA$ to $16.5 \ mA$. The value of current gain,$\beta$ is .........

An $n-p-n$ transistor with current gain $\beta=100$ in common emitter configuration is shown in the figure. The output voltage of the amplifier will be $.....V$.

An $NPN$ transistor is used in common emitter configuration as an amplifier with $1\,k\Omega$ load resistance. $A$ signal voltage of $10\,mV$ is applied across the base-emitter. This produces a $3\,mA$ change in the collector current and $15\,\mu A$ change in the base current of the amplifier. The input resistance and voltage gain are:

Given below are two statements: One is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A$: $n-p-n$ transistor permits more current than a $p-n-p$ transistor.
Reason $R$: Electrons have greater mobility as a charge carrier.
Choose the correct answer from the options given below:

In the following common emitter circuit,$\beta=100$ and $V_{CE}=7 \text{ V}$. If $V_{BE}$ is negligible,then the base current is (in $\text{ mA}$)

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