In a $p-n$ junction diode, an electric field of magnitude $2 \times 10^5 \ V/m$ exists in the depletion region. $A$ particle with charge $-3e$ can diffuse from $n$-side to $p$-side, if it has a minimum kinetic energy of $0.6 \ eV$. The width of the depletion region of the $p-n$ junction is: (in $nm$)

Two identical $P-N$ junctions are connected in series with a battery in three ways as shown in the figure. In which two circuits will the potential difference across the $P-N$ junctions be equal?

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?
$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.

In a $P-N$ junction,avalanche current flows in the circuit when the biasing is:

The increase in the width of the depletion region in a $p-n$ junction diode is due to

The current through an ideal $PN-$ junction diode shown in the following circuit diagram will be.......$mA$.